onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263 NTBG025N065SC1

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Kr.105 52 

(exc. VAT)

Kr.131 90 

(inc. VAT)

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Packaging Options:
RS Stock No.:
254-7663
Mfr. Part No.:
NTBG025N065SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1200V

Series

NTB

Package Type

TO-263

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Forward Voltage Vf

4.5V

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

164nC

Maximum Power Dissipation Pd

117W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK−7L


The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Used in telecommunication

Ultra low gate charge

High speed switching and low capacitance

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