onsemi NTB N-Channel MOSFET, 58 A, 1.2 kV Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1
- RS Stock No.:
- 254-7666
- Mfr. Part No.:
- NTBL045N065SC1
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2000 units)*
Kr. 146 872,00
(exc. VAT)
Kr. 183 590,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 29 March 2027
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Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | Kr. 73,436 | Kr. 146 872,00 |
| 4000 - 4000 | Kr. 71,553 | Kr. 143 106,00 |
| 6000 + | Kr. 69,764 | Kr. 139 528,00 |
*price indicative
- RS Stock No.:
- 254-7666
- Mfr. Part No.:
- NTBL045N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | HPSOF-8L | |
| Series | NTB | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 4.5V | |
| Maximum Power Dissipation Pd | 117W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type HPSOF-8L | ||
Series NTB | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 4.5V | ||
Maximum Power Dissipation Pd 117W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - 33 mohm, 650 V, M2, TOLL
The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Zero reverse recovery current of body diode
Ultra low gate charge
High speed switching and low capacitance
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