onsemi NTB N-Channel MOSFET, 58 A, 1.2 kV Enhancement, 7-Pin TO-263 NTBG022N120M3S
- RS Stock No.:
- 254-7660
- Mfr. Part No.:
- NTBG022N120M3S
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 800 units)*
Kr. 109 152,80
(exc. VAT)
Kr. 136 440,80
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 23 August 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | Kr. 136,441 | Kr. 109 152,80 |
| 1600 - 1600 | Kr. 133,712 | Kr. 106 969,60 |
| 2400 + | Kr. 130,984 | Kr. 104 787,20 |
*price indicative
- RS Stock No.:
- 254-7660
- Mfr. Part No.:
- NTBG022N120M3S
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.5V | |
| Typical Gate Charge Qg @ Vgs | 148nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.5V | ||
Typical Gate Charge Qg @ Vgs 148nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
The ON Semiconductor NTB series of planar sic mosfets is optimized for fast switching applications with a planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
100% avalanche tested
Improved power density
Gate drive voltage 15V to 18V
Related links
- onsemi NTB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263 NTBG022N120M3S
- onsemi NTB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263 NTBG060N065SC1
- onsemi NTB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1
- onsemi NTB N-Channel MOSFET & Diode 1.2 kV Enhancement, 7-Pin TO-263 NTBG160N120SC1
- onsemi NTB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263 NTBG080N120SC1
- onsemi NTB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263 NTBG040N120SC1
- onsemi NTH N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-247 NTH4L025N065SC1
- onsemi NTH N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-247 NTH4L075N065SC1