onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.107 462 40 

(exc. VAT)

Kr.134 328 00 

(inc. VAT)

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Units
Per unit
Per Reel*
800 - 800Kr. 134,328Kr. 107 462,40
1600 - 1600Kr. 131,642Kr. 105 313,60
2400 +Kr. 128,955Kr. 103 164,00

*price indicative

RS Stock No.:
254-7660
Mfr. Part No.:
NTBG022N120M3S
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1200V

Series

NTB

Package Type

TO-263

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

117W

Typical Gate Charge Qg @ Vgs

148nC

Forward Voltage Vf

4.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L


The ON Semiconductor NTB series of planar sic mosfets is optimized for fast switching applications with a planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

100% avalanche tested

Improved power density

Gate drive voltage 15V to 18V

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