MPN

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247

RS Stock No.:: 254-7669
Mfr. Part No.:: NTH4L025N065SC1
Brand:: onsemi

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247

Bulk discount available

Subtotal (1 tube of 450 units)*

Kr.64 392 75

(exc. VAT)

Kr.80 491 05

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

Shipping from 04. mai 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
450 - 450	Kr. 143,095	Kr. 64 392,75
900 - 900	Kr. 140,233	Kr. 63 104,85
1350 +	Kr. 137,429	Kr. 61 843,05

*price indicative

RS Stock No.:: 254-7669
Mfr. Part No.:: NTH4L025N065SC1
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	58A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Series	NTH
	Mount Type	Through Hole
	Pin Count	7
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	22 V
	Typical Gate Charge Qg @ Vgs	164nC
	Maximum Power Dissipation Pd	117W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	4.5V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS with exemption 7a, Pb-Free 2LI
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 58A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Series NTH
	Mount Type Through Hole
	Pin Count 7
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 22 V
	Typical Gate Charge Qg @ Vgs 164nC
	Maximum Power Dissipation Pd 117W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 4.5V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS with exemption 7a, Pb-Free 2LI
	Automotive Standard AEC-Q101

Datasheet - NTH4L025N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L

The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Used in telecommunication

Ultra low gate charge

High speed switching and low capacitance

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247

FREE delivery for online orders over 500,00 kr

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L

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