onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 3-Pin TO-247 NTHL025N065SC1
- RS Stock No.:
- 248-5818
- Mfr. Part No.:
- NTHL025N065SC1
- Brand:
- onsemi
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Subtotal (1 unit)*
Kr.186 70
(exc. VAT)
Kr.233 38
(inc. VAT)
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In Stock
- Plus 340 unit(s) shipping from 29. desember 2025
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 186,70 |
| 10 + | Kr. 160,85 |
*price indicative
- RS Stock No.:
- 248-5818
- Mfr. Part No.:
- NTHL025N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 117W | |
| Typical Gate Charge Qg @ Vgs | 164nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 117W | ||
Typical Gate Charge Qg @ Vgs 164nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L
The ON Semiconductor Silicon Carbide (SiC) MOSFET is a N channel MOSFET with 650 V drain to source voltage and 348 W power dissipation, TO247-3L packaging and this device is Halide free and RoHS compliant with exemption 7a, Pb−Free 2LI.
Ultra Low Gate Charge 164 nC
Low capacitance 278 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 19 mohm
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