onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247

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Subtotal (1 tube of 450 units)*

Kr.93 253 05 

(exc. VAT)

Kr.116 566 20 

(inc. VAT)

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  • Plus 450 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
450 - 450Kr. 207,229Kr. 93 253,05
900 - 900Kr. 203,084Kr. 91 387,80
1350 +Kr. 198,94Kr. 89 523,00

*price indicative

RS Stock No.:
254-7673
Mfr. Part No.:
NTHL015N065SC1
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1200V

Series

NTH

Package Type

TO-247

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

117W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Typical Gate Charge Qg @ Vgs

283nC

Forward Voltage Vf

4.5V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-3L


The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Used in solar inverters

High junction temperature

High speed switching and low capacitance

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