onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247 NTH4L075N065SC1

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Kr.94 95 

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Kr.118 69 

(inc. VAT)

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1 - 9Kr. 94,95
10 - 99Kr. 81,91
100 +Kr. 70,93

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Packaging Options:
RS Stock No.:
254-7672
Mfr. Part No.:
NTH4L075N065SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

NTH

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

117W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

61nC

Forward Voltage Vf

4.5V

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-Free 2LI, RoHS with exemption 7a

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L


The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Used in telecommunication

High reliability at high temperature ambient

High speed switching and low capacitance


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