onsemi NVH Type N-Channel MOSFET, 102 A, 1200 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 202-5734
- Mfr. Part No.:
- NVH4L020N120SC1
- Brand:
- onsemi
Subtotal (1 tube of 450 units)*
Kr.166 239 00
(exc. VAT)
Kr.207 801 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 07. april 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 450 + | Kr. 369,42 | Kr. 166 239,00 |
*price indicative
- RS Stock No.:
- 202-5734
- Mfr. Part No.:
- NVH4L020N120SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 102A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 220nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 510W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Standards/Approvals | AEC-Q101 and PPAP Capable | |
| Height | 22.74mm | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 102A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 220nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 510W | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Standards/Approvals AEC-Q101 and PPAP Capable | ||
Height 22.74mm | ||
Width 5.2 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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