SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247-4 onsemi NVHL160N120SC1
- RS Stock No.:
- 202-5746
- Mfr. Part No.:
- NVHL160N120SC1
- Brand:
- onsemi
450 In stock for same day dispatch
Added
Price Each (In a Tube of 450)
Kr. 123,463
(exc. VAT)
Kr. 154,329
(inc. VAT)
| Units | Per unit | Per Tube* |
| 450 + | Kr. 123,463 | Kr. 55 558,35 |
| *price indicative | ||
- RS Stock No.:
- 202-5746
- Mfr. Part No.:
- NVHL160N120SC1
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N-Channel, 1200 V, 160 mΩ, TO247-3L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
100% UIL Tested
Low effective output capacitance
RoHS compliant
100% UIL Tested
Low effective output capacitance
RoHS compliant
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 17 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247-4 |
| Series | NVH |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.16 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.3V |
| Transistor Material | SiC |
| Number of Elements per Chip | 1 |