STMicroelectronics SCT30N120H SiC N-Channel SiC Power Module, 45 A, 1200 V, 3-Pin HiP247 SCT30N120H

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Packaging Options:
RS Stock No.:
204-3952
Mfr. Part No.:
SCT30N120H
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Series

SCT30N120H

Package Type

HiP247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Transistor Material

SiC

Number of Elements per Chip

1

COO (Country of Origin):
CN
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability (TJ = 200°C)
Very fast and robust intrinsic body diode
Low capacitance

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