Vishay SiHB105N60EF Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 3000 units)*

Kr.65 325 00 

(exc. VAT)

Kr.81 657 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 21,775Kr. 65 325,00

*price indicative

RS Stock No.:
204-7204
Mfr. Part No.:
SIHB105N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Series

SiHB105N60EF

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

102mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

208W

Typical Gate Charge Qg @ Vgs

53nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.67mm

Width

4.83 mm

Height

15.88mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er)

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