Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220 SiHF30N60E-GE3

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Subtotal (1 pack of 2 units)*

Kr.140 03 

(exc. VAT)

Kr.175 038 

(inc. VAT)

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Being discontinued
  • Final 850 unit(s), ready to ship
Units
Per unit
Per Pack*
2 - 18Kr. 70,015Kr. 140,03
20 - 48Kr. 65,835Kr. 131,67
50 - 98Kr. 63,035Kr. 126,07
100 - 198Kr. 56,055Kr. 112,11
200 +Kr. 52,51Kr. 105,02

*price indicative

Packaging Options:
RS Stock No.:
903-4490
Mfr. Part No.:
SiHF30N60E-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

85nC

Maximum Power Dissipation Pd

37W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Height

16.12mm

Width

4.83 mm

Length

10.63mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor


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