Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3

Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.110 97 

(exc. VAT)

Kr.138 71 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 855 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45Kr. 22,194Kr. 110,97
50 - 245Kr. 21,096Kr. 105,48
250 - 495Kr. 19,928Kr. 99,64
500 - 1245Kr. 18,854Kr. 94,27
1250 +Kr. 14,392Kr. 71,96

*price indicative

Packaging Options:
RS Stock No.:
228-2840
Mfr. Part No.:
SiHA5N80AE-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

29W

Typical Gate Charge Qg @ Vgs

11nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Related links