Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220

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Bulk discount available

Subtotal (1 tube of 50 units)*

Kr.1 452 40 

(exc. VAT)

Kr.1 815 50 

(inc. VAT)

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Last RS stock
  • Final 350 unit(s), ready to ship
Units
Per unit
Per Tube*
50 - 50Kr. 29,048Kr. 1 452,40
100 - 200Kr. 24,402Kr. 1 220,10
250 +Kr. 23,239Kr. 1 161,95

*price indicative

RS Stock No.:
228-2878
Mfr. Part No.:
SIHP21N80AEF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

165.3A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

179W

Typical Gate Charge Qg @ Vgs

47nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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