Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220 SIHP21N80AEF-GE3
- RS Stock No.:
- 228-2879
- Mfr. Part No.:
- SIHP21N80AEF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.209 92
(exc. VAT)
Kr.262 40
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 375 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 41,984 | Kr. 209,92 |
| 50 - 120 | Kr. 37,798 | Kr. 188,99 |
| 125 - 245 | Kr. 35,692 | Kr. 178,46 |
| 250 - 495 | Kr. 30,66 | Kr. 153,30 |
| 500 + | Kr. 26,472 | Kr. 132,36 |
*price indicative
- RS Stock No.:
- 228-2879
- Mfr. Part No.:
- SIHP21N80AEF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 165.3A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 165.3A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Related links
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin TO-220AB SIHP21N80AEF-GE3
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin TO-220AB SiHP6N80AE-GE3
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin TO-220AB SiHP17N80AEF-GE3
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin DPAK SIHD11N80AE-T1-GE3
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin TO-220 FP SIHA24N80AE-GE3
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin DPAK SiHD5N80AE-GE3
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin TO-220 FP SiHA5N80AE-GE3
- Vishay E Series N-Channel MOSFET 600 V, 3-Pin TO-220AB SIHP065N60E-GE3