Vishay E Type N-Channel MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3

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Subtotal (1 pack of 2 units)*

Kr. 58,23

(exc. VAT)

Kr. 72,788

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 29,115Kr. 58,23
20 - 48Kr. 26,14Kr. 52,28
50 - 98Kr. 24,71Kr. 49,42
100 - 198Kr. 23,34Kr. 46,68
200 +Kr. 21,565Kr. 43,13

*price indicative

Packaging Options:
RS Stock No.:
228-2837
Mfr. Part No.:
SIHA24N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

184mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

35W

Typical Gate Charge Qg @ Vgs

59nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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