N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

RS Stock No.:: 768-9310
Mfr. Part No.:: SIHB30N60E-GE3
Brand:: Vishay

N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

Price Each**

Kr. 60,11

(exc. VAT)

Kr. 75,14

(inc. VAT)

39 In stock for same day dispatch*

60 available from Europe for delivery within 1 working day(s)

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over kr 500,00

Units	Per unit
1 - 9	Kr. 60,11
10 - 49	Kr. 54,08
50 - 99	Kr. 48,04
100 - 249	Kr. 45,08
250 +	Kr. 42,01

**price indicative

RS Stock No.:: 768-9310
Mfr. Part No.:: SIHB30N60E-GE3
Brand:: Vishay

SiHB30N60E, E Series Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	600 V
Package Type	D2PAK (TO-263)
Series	E Series
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	125 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.65mm
Typical Gate Charge @ Vgs	85 nC @ 10 V
Length	10.67mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	4.83mm

N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

FREE delivery for orders over kr 500,00

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

Features