Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-263 SIHB30N60E-GE3
- RS Stock No.:
- 768-9310
- Mfr. Part No.:
- SIHB30N60E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 unit)*
Kr.68 18
(exc. VAT)
Kr.85 22
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 364 unit(s) shipping from 29. desember 2025
- Plus 32 unit(s) shipping from 29. desember 2025
- Plus 689 unit(s) shipping from 05. januar 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 68,18 |
| 10 - 49 | Kr. 61,32 |
| 50 - 99 | Kr. 54,68 |
| 100 - 249 | Kr. 51,25 |
| 250 + | Kr. 47,59 |
*price indicative
- RS Stock No.:
- 768-9310
- Mfr. Part No.:
- SIHB30N60E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 250W | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 250W | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
MOSFET Transistors, Vishay Semiconductor
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