onsemi SUPERFET III Type N-Channel MOSFET & Diode, 13 A, 800 V Enhancement, 3-Pin TO-220 NTP360N80S3Z

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Subtotal (1 pack of 5 units)*

Kr.169 13 

(exc. VAT)

Kr.211 41 

(inc. VAT)

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5 +Kr. 33,826Kr. 169,13

*price indicative

Packaging Options:
RS Stock No.:
205-2504
Mfr. Part No.:
NTP360N80S3Z
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Series

SUPERFET III

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

25.3nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

96W

Maximum Operating Temperature

150°C

Height

4.7mm

Width

9.65 mm

Length

30.7mm

Standards/Approvals

No

Automotive Standard

No

The ON Semiconductor SUPERFET III series N-channel 800V MOSFET is optimized for primary switch of fly back converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal zener diode significantly improves ESD capability. This new family enables make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.

Continuous Drain Current rating is 13A

Drain to source on resistance rating is 360mohm

Ultra low gate charge

Low stored energy in output capacitance

100% avalanche tested

Package type is TO-220

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