DiodesZetex DMN10 Type N-Channel MOSFET, 3.7 A, 100 V Enhancement, 8-Pin PowerDI3333 DMN10H170SFGQ-7

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Subtotal (1 pack of 25 units)*

Kr.127 225 

(exc. VAT)

Kr.159 025 

(inc. VAT)

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25 +Kr. 5,089Kr. 127,23

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Packaging Options:
RS Stock No.:
206-0073
Mfr. Part No.:
DMN10H170SFGQ-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.7A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerDI3333

Series

DMN10

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

133mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

26.7nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

3.25 mm

Height

0.75mm

Length

3.25mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The DiodesZetex 100V complementary pair enhancement mode MOSFET is designed to meet the stringent requirements of automotive application. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in motor control and power management function.

Low RDS(ON) – ensures on state losses are minimized

Small form factor thermally efficient package

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