DiodesZetex DMN3731 Type N-Channel MOSFET, 900 mA, 30 V Enhancement, 3-Pin SOT-23 DMN3731U-7
- RS Stock No.:
- 206-0086
- Mfr. Part No.:
- DMN3731U-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 reel of 3000 units)*
Kr.1 272 00
(exc. VAT)
Kr.1 590 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 3 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | Kr. 0,424 | Kr. 1 272,00 |
| 9000 - 42000 | Kr. 0,407 | Kr. 1 221,00 |
| 45000 + | Kr. 0,398 | Kr. 1 194,00 |
*price indicative
- RS Stock No.:
- 206-0086
- Mfr. Part No.:
- DMN3731U-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 900mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | DMN3731 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 730mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.4W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.3mm | |
| Standards/Approvals | No | |
| Width | 2.8 mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 900mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series DMN3731 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 730mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.4W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.3mm | ||
Standards/Approvals No | ||
Width 2.8 mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 8 V with 0.4 W thermal power dissipation.
Low VGS(TH), can be driven directly from a battery
ESD protected gate
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