DiodesZetex Dual DMNH6035 1 Type N-Channel MOSFET, 33 A, 60 V Enhancement, 8-Pin PowerDI5060

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Subtotal (1 reel of 2500 units)*

Kr.18 612 50 

(exc. VAT)

Kr.23 265 00 

(inc. VAT)

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Units
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Per Reel*
2500 +Kr. 7,445Kr. 18 612,50

*price indicative

RS Stock No.:
206-0096
Mfr. Part No.:
DMNH6035SPDW-13
Brand:
DiodesZetex
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Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerDI5060

Series

DMNH6035

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.75V

Maximum Power Dissipation Pd

68W

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Width

5.8 mm

Height

1.05mm

Length

4.9mm

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

AEC-Q100, AEC-Q101, AEC-Q200

COO (Country of Origin):
CN
The DiodesZetex 60V N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 2.4 W thermal power dissipation.

Rated to +175°C is ideal for high ambient temperature environment

Low Qg – minimises switching losses

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