DiodesZetex DMT6006 Type N-Channel MOSFET, 98 A, 60 V Enhancement, 8-Pin PowerDI5060 DMT6006SPS-13
- RS Stock No.:
- 206-0150
- Mfr. Part No.:
- DMT6006SPS-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.219 05
(exc. VAT)
Kr.273 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 975 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | Kr. 8,762 | Kr. 219,05 |
| 50 - 75 | Kr. 8,598 | Kr. 214,95 |
| 100 - 225 | Kr. 7,486 | Kr. 187,15 |
| 250 - 975 | Kr. 7,299 | Kr. 182,48 |
| 1000 + | Kr. 7,116 | Kr. 177,90 |
*price indicative
- RS Stock No.:
- 206-0150
- Mfr. Part No.:
- DMT6006SPS-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 98A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI5060 | |
| Series | DMT6006 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.45W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 98A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI5060 | ||
Series DMT6006 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.45W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex 60V,8 pin N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 2.45 W thermal power dissipation.
Low RDS(ON) – ensures on-state losses are minimized
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