Vishay SiDR626LDP Type N-Channel MOSFET, 204 A, 60 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

Kr.50 904 00 

(exc. VAT)

Kr.63 630 00 

(inc. VAT)

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Per Reel*
3000 +Kr. 16,968Kr. 50 904,00

*price indicative

RS Stock No.:
210-4956
Mfr. Part No.:
SiDR626LDP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

204A

Maximum Drain Source Voltage Vds

60V

Series

SiDR626LDP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

41nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.9mm

Height

0.51mm

Width

4.9 mm

Automotive Standard

No

The Vishay N-Channel 60 V (D-S) MOSFET has PowerPAK SO-8DC package type.

TrenchFET® Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

Top side cooling feature provides additional venue for thermal transfer

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