Vishay Type N-Channel MOSFET, 430 A, 20 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

Kr.25 368 00 

(exc. VAT)

Kr.31 710 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 8,456Kr. 25 368,00

*price indicative

RS Stock No.:
210-4998
Mfr. Part No.:
SIR178DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

430A

Maximum Drain Source Voltage Vds

20V

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.31mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

204nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.25mm

Width

5.26 mm

Standards/Approvals

No

Height

1.12mm

Automotive Standard

No

The Vishay N-Channel 20 V (D-S) MOSFET has PowerPAK SO-8 package type with 430 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Leadership RDS(ON) minimizes power loss from conduction

2.5 V ratings and operation at low voltage gate drive

100 % Rg and UIS tested

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