Vishay SiDR392DP Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIDR392DP-T1-RE3
- RS Stock No.:
- 204-7234
- Mfr. Part No.:
- SIDR392DP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.517 78
(exc. VAT)
Kr.647 22
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 28. august 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | Kr. 25,889 | Kr. 517,78 |
| 40 - 80 | Kr. 25,117 | Kr. 502,34 |
| 100 - 180 | Kr. 24,081 | Kr. 481,62 |
| 200 - 480 | Kr. 22,783 | Kr. 455,66 |
| 500 + | Kr. 21,49 | Kr. 429,80 |
*price indicative
- RS Stock No.:
- 204-7234
- Mfr. Part No.:
- SIDR392DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | SiDR392DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.62mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 188nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series SiDR392DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.62mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 188nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Length 6.15mm | ||
Automotive Standard No | ||
The Vishay N-Channel 30 V (D-S) MOSFET has a Top side cooling feature provides additional venue for thermal transfer. It has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
Related links
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