Vishay SiDR220DP Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SO-8 SIDR220DP-T1-RE3
- RS Stock No.:
- 204-7232
- Mfr. Part No.:
- SIDR220DP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.407 61
(exc. VAT)
Kr.509 51
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 10. juli 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | Kr. 40,761 | Kr. 407,61 |
| 20 - 40 | Kr. 33,027 | Kr. 330,27 |
| 50 - 90 | Kr. 30,591 | Kr. 305,91 |
| 100 - 240 | Kr. 28,543 | Kr. 285,43 |
| 250 + | Kr. 27,319 | Kr. 273,19 |
*price indicative
- RS Stock No.:
- 204-7232
- Mfr. Part No.:
- SIDR220DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | SiDR220DP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.58mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 200nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series SiDR220DP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.58mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 200nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Automotive Standard No | ||
The Vishay N-Channel 25 V (D-S) MOSFET has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
Related links
- Vishay SiDR220DP N-Channel MOSFET 25 V, 8-Pin PowerPAK SO-8DC SIDR220DP-T1-RE3
- Vishay SiDR140DP N-Channel MOSFET 25 V, 8-Pin PowerPAK SO-8DC SIDR140DP-T1-RE3
- Vishay N-Channel MOSFET 25 V, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3
- Vishay SiDR392DP N-Channel MOSFET 30 V, 8-Pin PowerPAK SO-8DC SIDR392DP-T1-RE3
- Vishay TrenchFET® Gen IV N-Channel MOSFET 40 V, 8-Pin PowerPAK SO-8DC SIDR638DP-T1-RE3
- Vishay N-Channel MOSFET 100 V, 8-Pin PowerPak SO-8DC SIDR510EP-T1-RE3
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8DC SiDR626LDP-T1-RE3
- Vishay N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8DC SIDR5802EP-T1-RE3