Vishay SiDR220DP Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SO-8

View all MOSFETs

Subtotal (1 reel of 3000 units)*

Kr.64 548 00 

(exc. VAT)

Kr.80 685 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 10. juli 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +Kr. 21,516Kr. 64 548,00

*price indicative

RS Stock No.:
204-7230
Mfr. Part No.:
SIDR220DP-T1-RE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

25V

Series

SiDR220DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.58mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

200nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

5.15 mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 25 V (D-S) MOSFET has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

Related links