Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA90DP-T1-RE3

Subtotal (1 pack of 5 units)*

Kr.80 17 

(exc. VAT)

Kr.100 21 

(inc. VAT)

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Per unit
Per Pack*
5 +Kr. 16,034Kr. 80,17

*price indicative

Packaging Options:
RS Stock No.:
134-9698
Mfr. Part No.:
SIRA90DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

102nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

6.25mm

Width

5.26 mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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