Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8 SIR668DP-T1-RE3

Subtotal (1 pack of 2 units)*

Kr.32 94 

(exc. VAT)

Kr.41 18 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 7 366 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 +Kr. 16,47Kr. 32,94

*price indicative

Packaging Options:
RS Stock No.:
134-9725
Mfr. Part No.:
SIR668DP-T1-RE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.05mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

72nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

6.25mm

Width

5.26 mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links