Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

Kr.36 864 00 

(exc. VAT)

Kr.46 080 00 

(inc. VAT)

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Units
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Per Reel*
3000 +Kr. 12,288Kr. 36 864,00

*price indicative

RS Stock No.:
134-9160
Mfr. Part No.:
SIR668DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.05mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

72nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.26 mm

Standards/Approvals

No

Height

1.12mm

Length

6.25mm

Automotive Standard

No

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