Vishay TrenchFET Type N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

Kr.127 67 

(exc. VAT)

Kr.159 59 

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 5 560 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 90Kr. 12,767Kr. 127,67
100 - 240Kr. 12,012Kr. 120,12
250 - 490Kr. 10,857Kr. 108,57
500 - 990Kr. 10,216Kr. 102,16
1000 +Kr. 9,587Kr. 95,87

*price indicative

Packaging Options:
RS Stock No.:
228-2914
Mfr. Part No.:
SiR880BDP-T1-RE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

70.6A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

71.4W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

43.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 80 V MOSFET.

100 % Rg and UIS tested

Related links