Vishay TrenchFET Type N-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3
- RS Stock No.:
- 228-2908
- Mfr. Part No.:
- SiR580DP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.122 98
(exc. VAT)
Kr.153 725
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 5 980 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 24,596 | Kr. 122,98 |
| 50 - 120 | Kr. 23,154 | Kr. 115,77 |
| 125 - 245 | Kr. 20,912 | Kr. 104,56 |
| 250 - 495 | Kr. 19,676 | Kr. 98,38 |
| 500 + | Kr. 18,488 | Kr. 92,44 |
*price indicative
- RS Stock No.:
- 228-2908
- Mfr. Part No.:
- SiR580DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 146A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 50.6nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 146A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 50.6nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 80 V MOSFET.
100 % Rg and UIS tested
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