Vishay TrenchFET Type N-Channel MOSFET, 23.5 A, 100 V Enhancement, 8-Pin SO-8 Si7454FDP-T1-RE3

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Subtotal (1 pack of 10 units)*

Kr.93 01 

(exc. VAT)

Kr.116 26 

(inc. VAT)

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Last RS stock
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Units
Per unit
Per Pack*
10 - 90Kr. 9,301Kr. 93,01
100 - 240Kr. 8,363Kr. 83,63
250 - 490Kr. 7,15Kr. 71,50
500 - 990Kr. 6,052Kr. 60,52
1000 +Kr. 5,583Kr. 55,83

*price indicative

Packaging Options:
RS Stock No.:
228-2829
Mfr. Part No.:
Si7454FDP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23.5A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

29.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

39W

Typical Gate Charge Qg @ Vgs

17.4nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Automotive Standard

No

The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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