Vishay TrenchFET Type N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3

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Subtotal (1 pack of 5 units)*

Kr.142 08 

(exc. VAT)

Kr.177 60 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 28,416Kr. 142,08
50 - 120Kr. 25,556Kr. 127,78
125 - 245Kr. 22,742Kr. 113,71
250 - 495Kr. 20,752Kr. 103,76
500 +Kr. 17,892Kr. 89,46

*price indicative

Packaging Options:
RS Stock No.:
228-2904
Mfr. Part No.:
SiR510DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

54nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

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