Vishay SiDR140DP Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

Kr.62 772 00 

(exc. VAT)

Kr.78 465 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 20,924Kr. 62 772,00

*price indicative

RS Stock No.:
204-7235
Mfr. Part No.:
SIDR140DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

25V

Series

SiDR140DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.67mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

113nC

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Length

6.15mm

Width

5.15 mm

Height

0.61mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 25 V (D-S) MOSFET has a top side cooling feature provides additional venue for thermal transfer. It has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

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