Vishay SiDR392DP Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

Kr.40 383 00 

(exc. VAT)

Kr.50 478 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 13,461Kr. 40 383,00

*price indicative

RS Stock No.:
204-7233
Mfr. Part No.:
SIDR392DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

SiDR392DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.62mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

188nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.15 mm

Length

6.15mm

Automotive Standard

No

The Vishay N-Channel 30 V (D-S) MOSFET has a Top side cooling feature provides additional venue for thermal transfer. It has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

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