Vishay SiRA74DP Type N-Channel MOSFET, 81.2 A, 40 V Enhancement, 8-Pin SO-8 SiRA74DP-T1-GE3
- RS Stock No.:
- 210-5009
- Mfr. Part No.:
- SiRA74DP-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.96 44
(exc. VAT)
Kr.120 55
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 5 340 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 9,644 | Kr. 96,44 |
| 100 - 240 | Kr. 9,152 | Kr. 91,52 |
| 250 - 490 | Kr. 6,944 | Kr. 69,44 |
| 500 - 990 | Kr. 6,258 | Kr. 62,58 |
| 1000 + | Kr. 5,308 | Kr. 53,08 |
*price indicative
- RS Stock No.:
- 210-5009
- Mfr. Part No.:
- SiRA74DP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 81.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SiRA74DP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 46.2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.26 mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 81.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SiRA74DP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 46.2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.26 mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
The Vishay N-Channel 40 V (D-S) 150 °C MOSFET has PowerPAK SO-8 package type.
TrenchFET Gen IV power MOSFET
Tuned for the lowest RDS-Qoss FOM
100 % Rg and UIS tested
Qgd/Qgs ratio < 1 optimizes switching characteristics
Optimized for wave soldering
Flexible leads increase resilience to board flexing
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