STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

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Subtotal 10 units (supplied in a tube)*

Kr. 2 938,90

(exc. VAT)

Kr. 3 673,60

(inc. VAT)

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  • Shipping from 29 March 2027
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Units
Per unit
10 - 24Kr. 293,89
25 +Kr. 287,49

*price indicative

Packaging Options:
RS Stock No.:
213-3945P
Mfr. Part No.:
SCTWA90N65G2V-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

650V

Series

SCTWA90N65G2V-4

Package Type

Hip-247

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

656W

Typical Gate Charge Qg @ Vgs

157nC

Forward Voltage Vf

2.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Length

15.9mm

Height

5.1mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.

High speed switching performance

Very high operating junction temperature capability

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

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