Infineon OptiMOS Type N-Channel MOSFET, 195 A, 40 V, 8-Pin SuperSO BSC014N04LSIATMA1
- RS Stock No.:
- 214-4319
- Distrelec Article No.:
- 304-39-396
- Mfr. Part No.:
- BSC014N04LSIATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.111 88
(exc. VAT)
Kr.139 85
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 3 915 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 22,376 | Kr. 111,88 |
| 25 - 45 | Kr. 18,808 | Kr. 94,04 |
| 50 - 120 | Kr. 17,664 | Kr. 88,32 |
| 125 - 245 | Kr. 16,336 | Kr. 81,68 |
| 250 + | Kr. 15,238 | Kr. 76,19 |
*price indicative
- RS Stock No.:
- 214-4319
- Distrelec Article No.:
- 304-39-396
- Mfr. Part No.:
- BSC014N04LSIATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
This Infineon OptiMOS Power MOSFET is optimized for synchronous rectification and has higher solder joint reliability due to enlarged source interconnection.
It is Halogen-free according to IEC61249-2-21
Related links
- Infineon OptiMOS Type N-Channel MOSFET 40 V, 8-Pin SuperSO
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- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO BSC032N04LSATMA1
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- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin SuperSO