Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 BSS7728NH6327XTSA2

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Subtotal (1 pack of 200 units)*

Kr.195 20 

(exc. VAT)

Kr.244 00 

(inc. VAT)

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Last RS stock
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Units
Per unit
Per Pack*
200 - 200Kr. 0,976Kr. 195,20
400 - 800Kr. 0,927Kr. 185,40
1000 - 1800Kr. 0,888Kr. 177,60
2000 - 4800Kr. 0,849Kr. 169,80
5000 +Kr. 0,683Kr. 136,60

*price indicative

Packaging Options:
RS Stock No.:
214-4337
Mfr. Part No.:
BSS7728NH6327XTSA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200mA

Maximum Drain Source Voltage Vds

60V

Series

SIPMOS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

1nC

Maximum Power Dissipation Pd

0.36W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

1.4 mm

Height

1.12mm

Length

3.04mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

This Infineon SIPMOS Small signal MOSFETis ideally suited for space-constrained automotive and/or non-automotive applications. They can be found in almost all applications e.g. battery protection, battery charging, LED lighting and so on.

It is Halogen-free according to IEC61249-2-21

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