Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263

Bulk discount available

Subtotal 10 units (supplied on a continuous strip)*

Kr. 646,36

(exc. VAT)

Kr. 807,95

(inc. VAT)

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Units
Per unit
10 - 20Kr. 64,636
25 - 45Kr. 60,312
50 - 120Kr. 56,01
125 +Kr. 52,418

*price indicative

Packaging Options:
RS Stock No.:
214-4366P
Mfr. Part No.:
IPB120N08S403ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS -T2

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

128nC

Maximum Power Dissipation Pd

278W

Maximum Operating Temperature

175°C

Height

4.5mm

Length

10.02mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

This Infineon OptiMOS T2 MOSFET is 100% Avalanche tested and is RoHS compliant.

It is AEC Q101 qualified