Infineon 500V CoolMOS CE Type N-Channel MOSFET, 2.2 A, 500 V Enhancement, 3-Pin TO-252 IPD50R2K0CEAUMA1

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Subtotal (1 pack of 50 units)*

Kr. 155,80

(exc. VAT)

Kr. 194,75

(inc. VAT)

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  • 2 000 unit(s) ready to ship
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Units
Per unit
Per Pack*
50 - 50Kr. 3,116Kr. 155,80
100 - 200Kr. 2,277Kr. 113,85
250 - 450Kr. 2,151Kr. 107,55
500 - 1200Kr. 1,993Kr. 99,65
1250 +Kr. 1,84Kr. 92,00

*price indicative

Packaging Options:
RS Stock No.:
214-4379
Mfr. Part No.:
IPD50R2K0CEAUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

500V

Series

500V CoolMOS CE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

33W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.83V

Maximum Operating Temperature

150°C

Width

6.42 mm

Standards/Approvals

No

Height

2.35mm

Length

6.65mm

Automotive Standard

No

This Infineon 500 V Cool MOS CE MOSFET is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards.

It provides very high commutation ruggedness

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