Infineon 500V CoolMOS CE Type N-Channel MOSFET, 4.8 A, 500 V N, 3-Pin TO-252 IPD50R1K4CEAUMA1

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Subtotal (1 pack of 50 units)*

Kr.252 60 

(exc. VAT)

Kr.315 75 

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 50Kr. 5,052Kr. 252,60
100 - 200Kr. 3,638Kr. 181,90
250 - 450Kr. 3,386Kr. 169,30
500 - 1200Kr. 3,183Kr. 159,15
1250 +Kr. 2,929Kr. 146,45

*price indicative

Packaging Options:
RS Stock No.:
218-3047
Mfr. Part No.:
IPD50R1K4CEAUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.8A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-252

Series

500V CoolMOS CE

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

N

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.83V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

8.2nC

Maximum Power Dissipation Pd

25W

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Height

2.41mm

Width

6.22 mm

Automotive Standard

No

The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. This series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Very high commutation ruggedness

Easy to use/drive

Pb-free plating, Halogen free mold compound

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