Infineon 600V CoolMOS CE Type N-Channel MOSFET, 6.8 A, 600 V N, 3-Pin TO-220
- RS Stock No.:
- 218-3000
- Mfr. Part No.:
- IPA60R1K0CEXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.326 25
(exc. VAT)
Kr.407 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 150 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 6,525 | Kr. 326,25 |
| 100 - 200 | Kr. 5,091 | Kr. 254,55 |
| 250 - 450 | Kr. 4,764 | Kr. 238,20 |
| 500 - 1200 | Kr. 4,436 | Kr. 221,80 |
| 1250 + | Kr. 4,112 | Kr. 205,60 |
*price indicative
- RS Stock No.:
- 218-3000
- Mfr. Part No.:
- IPA60R1K0CEXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS CE | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 61W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 29.75mm | |
| Height | 16.15mm | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS CE | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 61W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 29.75mm | ||
Height 16.15mm | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies . It is used in PFC stages, hard switching PWM stages and resonant switching stages, for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting.
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
Related links
- Infineon CoolMOS™ CE N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPA60R1K0CEXKSA1
- Infineon CoolMOS™ CE N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPA60R1K5CEXKSA1
- Infineon CoolMOS™ CE N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPAW60R600CEXKSA1
- Infineon CoolMOS™ CE N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R1K0CEAUMA1
- Vishay SiHA125N60EF N-Channel MOSFET 600 V, 3-Pin TO-220 FP SIHA125N60EF-GE3
- Infineon N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPA60R180P7XKSA1
- Vishay SiHA105N60EF N-Channel MOSFET 600 V, 3-Pin TO-220 FP SIHA105N60EF-GE3
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPA60R280P7XKSA1