Infineon 600V CoolMOS CE Type N-Channel MOSFET, 5 A, 600 V, 3-Pin TO-251
- RS Stock No.:
- 218-3074
- Mfr. Part No.:
- IPS60R1K5CEAKMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 75 units)*
Kr.171 15
(exc. VAT)
Kr.213 90
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 125 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | Kr. 2,282 | Kr. 171,15 |
| 150 - 300 | Kr. 2,219 | Kr. 166,43 |
| 375 - 675 | Kr. 2,161 | Kr. 162,08 |
| 750 - 1800 | Kr. 2,107 | Kr. 158,03 |
| 1875 + | Kr. 2,053 | Kr. 153,98 |
*price indicative
- RS Stock No.:
- 218-3074
- Mfr. Part No.:
- IPS60R1K5CEAKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-251 | |
| Series | 600V CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 49W | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.4 mm | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-251 | ||
Series 600V CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 49W | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Operating Temperature 150°C | ||
Width 2.4 mm | ||
Height 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ series N-channel Power MOSFET. The CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption.
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
Related links
- Infineon CoolMOS™ CE N-Channel MOSFET 600 V, 3-Pin IPAK IPS60R1K5CEAKMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 600 V, 3-Pin IPAK IPU60R1K5CEAKMA2
- STMicroelectronics MDmesh N-Channel MOSFET 600 V, 3-Pin IPAK STU7NM60N
- Infineon CoolMOS™ CE N-Channel MOSFET 600 V, 3-Pin IPAK IPU60R2K1CEAKMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 600 V, 3-Pin IPAK IPS60R800CEAKMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 600 V, 3-Pin IPAK IPS60R3K4CEAKMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPA60R1K5CEXKSA1
- onsemi SuperFET II N-Channel MOSFET 600 V, 3-Pin IPAK FCU900N60Z