Infineon CoolMOS CE Type N-Channel MOSFET, 4.8 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R1K4CEATMA1

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Kr.96 85 

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Kr.121 05 

(inc. VAT)

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25 - 225Kr. 3,874Kr. 96,85
250 - 600Kr. 2,91Kr. 72,75
625 - 1225Kr. 2,718Kr. 67,95
1250 - 2475Kr. 2,517Kr. 62,93
2500 +Kr. 1,936Kr. 48,40

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Packaging Options:
RS Stock No.:
130-0911
Mfr. Part No.:
IPN50R1K4CEATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.8A

Maximum Drain Source Voltage Vds

550V

Series

CoolMOS CE

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

8.2nC

Maximum Power Dissipation Pd

5W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

0.83V

Maximum Operating Temperature

150°C

Width

3.7 mm

Length

6.7mm

Height

1.7mm

Standards/Approvals

No

Automotive Standard

No

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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