Infineon CoolMOS CE Type N-Channel MOSFET, 14.1 A, 550 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.12 267 50 

(exc. VAT)

Kr.15 335 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500Kr. 4,907Kr. 12 267,50
5000 +Kr. 4,662Kr. 11 655,00

*price indicative

RS Stock No.:
168-5909
Mfr. Part No.:
IPD50R380CEAUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

14.1A

Maximum Drain Source Voltage Vds

550V

Series

CoolMOS CE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

380mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

98W

Forward Voltage Vf

0.85V

Typical Gate Charge Qg @ Vgs

24.8nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

6.22 mm

Height

2.41mm

Length

6.73mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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