Infineon CoolMOS CE N-Channel MOSFET, 18.5 A, 550 V Enhancement, 3-Pin TO-220 IPP50R190CEXKSA1
- RS Stock No.:
- 914-0227
- Distrelec Article No.:
- 304-44-440
- Mfr. Part No.:
- IPP50R190CEXKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
Kr. 186,93
(exc. VAT)
Kr. 233,66
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 390 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 18,693 | Kr. 186,93 |
| 50 - 90 | Kr. 17,766 | Kr. 177,66 |
| 100 - 240 | Kr. 17,011 | Kr. 170,11 |
| 250 - 490 | Kr. 16,268 | Kr. 162,68 |
| 500 + | Kr. 15,147 | Kr. 151,47 |
*price indicative
- RS Stock No.:
- 914-0227
- Distrelec Article No.:
- 304-44-440
- Mfr. Part No.:
- IPP50R190CEXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18.5A | |
| Maximum Drain Source Voltage Vds | 550V | |
| Package Type | TO-220 | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 47.2nC | |
| Maximum Power Dissipation Pd | 127W | |
| Forward Voltage Vf | 0.85V | |
| Maximum Gate Source Voltage Vgs | -30, +30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.57mm | |
| Standards/Approvals | No | |
| Height | 15.95mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18.5A | ||
Maximum Drain Source Voltage Vds 550V | ||
Package Type TO-220 | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 47.2nC | ||
Maximum Power Dissipation Pd 127W | ||
Forward Voltage Vf 0.85V | ||
Maximum Gate Source Voltage Vgs -30, +30V | ||
Maximum Operating Temperature 150°C | ||
Width 4.57mm | ||
Standards/Approvals No | ||
Height 15.95mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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