Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 10 A, 600 V Enhancement, 5-Pin ThinPAK

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Subtotal (1 reel of 3000 units)*

Kr.27 786 00 

(exc. VAT)

Kr.34 734 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 9,262Kr. 27 786,00

*price indicative

RS Stock No.:
214-4399
Mfr. Part No.:
IPL60R365P7AUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Series

600V CoolMOS P7

Package Type

ThinPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

365mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

13nC

Maximum Power Dissipation Pd

46W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

1.1mm

Standards/Approvals

No

Width

8.1 mm

Length

8.1mm

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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