Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF

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Subtotal (1 reel of 2000 units)*

Kr.123 406 00 

(exc. VAT)

Kr.154 258 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +Kr. 61,703Kr. 123 406,00

*price indicative

RS Stock No.:
214-4423
Mfr. Part No.:
IPT111N20NFDATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

200V

Package Type

HSOF

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

65nC

Maximum Operating Temperature

175°C

Width

10.58 mm

Length

10.1mm

Standards/Approvals

No

Height

2.4mm

Automotive Standard

No

This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

It is RoHS compliant

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